MT53D1024M32D4DT-046 vs MT53D1024M32D4DT-046 AUT:D 对比
详细并排对比 MT53D1024M32D4DT-046 出自 Micron Technology 和 MT53D1024M32D4DT-046 AUT:D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53D1024M32D4DT-046 - 32Gbit LPDDR4 DRAM 2.133GHz | Micron
MT53D1024M32D4DT-046 ✓ 量产中Micron Technology
MT53D1024M32D4DT-046 AUT:D - 32Gbit LPDDR4 DRAM | Micron
MT53D1024M32D4DT-046 AUT:D ✓ 量产中规格对比
| 参数 | MT53D1024M32D4DT-046 | MT53D1024M32D4DT-046 AUT:D |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Mobile LPDDR4 |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $21.15 | $29.75 |
| 存储器类型 | SDRAM - Mobile LPDDR4 | Mobile LPDDR4/LPDDR4X SDRAM |
| 存储容量 | 32 Gbit (4 GB) | — |
| 存储组织 | 1G x 32 | 1 Gbit x 32 |
| Clock Frequency | 2.133 GHz (4266 MT/s) | [DATA_NEEDED: clock frequency] |
| 接口 | LPDDR4 (unified LPDDR4/LPDDR4X die) | LPDDR4/LPDDR4X unified (per 200b datasheet) |
| Supply Voltage VDD2/VDDQ | 1.1 V (LPDDR4 mode) | — |
| LPDDR4X VDDQ | 0.60 V (LPDDR4X mode) | — |
| 封装 | 200-VFBGA (10 mm x 14.5 mm) | 200-WFBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 特性 | Built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask | — |
| Operating Temperature (WT:D) | -40C to +95C | — |
| Operating Temperature (AAT:D) | -40C to +105C | — |
| Grade | WT:D (standard), AAT:D (automotive/industrial), AIT:D (automotive) | — |
| Access Type | Synchronous, 8n prefetch, burst length 16 | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Auto Precharge | Yes | — |
| Refresh | Self-refresh with per-bank refresh support | — |
| Density | — | 32 Gbit |
| 数据速率 | — | [DATA_NEEDED: data rate MT/s] |
| VDDQ Voltage (LPDDR4) | — | 1.10 V |
| VDDQ Voltage (LPDDR4X) | — | 0.60 V |
| Package Size | — | [DATA_NEEDED: package dimensions mm] |
| 工作温度 | — | -40 C to +125 C |
| Automotive Grade | — | Yes (AUT:D suffix, automotive flow) |
| Speed Grade | — | -046 |
| Die Configuration | — | [DATA_NEEDED: SDP/DDP/QDP configuration] |